TCAD Investigation of Differently Doped DLC Passivation for Large-Area High-Power Diodes

نویسندگان

چکیده

An electroactive passivation for high-voltage diodes with bevel termination has been investigated based on diamondlike carbon (DLC) films. Variations of the DLC properties, i.e., conductivity and geometry, have by experiments numerical simulations to purpose gaining an insight their influence diode leakage current breakdown voltage. The role played DLC/Si interface characterizing metal–DLC–Si devices. Both boron nitrogen doping investigated, a TCAD setup provided accounting main transport features material different configurations. A significant polarization effect observed in material, which improves performance as material. High-voltage characterized simulated layers top order identify blocking state. correlation voltage thickness is explained simulation results.

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ژورنال

عنوان ژورنال: IEEE Journal of Emerging and Selected Topics in Power Electronics

سال: 2021

ISSN: ['2168-6777', '2168-6785']

DOI: https://doi.org/10.1109/jestpe.2019.2921871